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參數(shù)資料
| 型號： | IS42S32200-6T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封裝： | 0.400 INCH, TSOP2-86 |
| 文件頁數(shù)： | 34/55頁 |
| 文件大?。?/td> | 982K |
| 代理商： | IS42S32200-6T |
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IS42S32200
ISSI
34
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
Rev. 00B
08/14/03
AC ELECTRICAL CHARACTERISTICS
(1,2,3)
-6
-7
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
DPL3
Input Data To Precharge
Command Delay time
CAS
Latency = 3
2CLK
—
2CLK
—
ns
t
DPL2
CAS
Latency = 2
2CLK
—
2CLK
—
ns
t
DAL3
Input Data To Active / Refresh
CAS
Latency = 3
Command Delay time (During Auto-Precharge)
2CLK+t
RP
—
2CLK+t
RP
—
ns
t
DAL2
CAS
Latency = 2
2CLK+t
RP
—
2CLK+t
RP
—
ns
t
T
Transition Time
(2)
0.3
1.2
0.3
1.2
ns
t
WR
Write Recovery Time
1CLK+6ns
—
1CLK+7ns
—
t
CK
t
XSR
Exit Self Refresh and Active Command
(6)
70
—
70
—
ns
t
RFC
Auto Refresh Period
60
—
70
—
ns
t
REF
Notes:
1. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device operation
is ensured. (Vcc and VccQ must be powered up simultaneously. GND and GNDQ must be at same potential.) The two AUTO
REFRESH command wake-ups should be repeated anytime the t
REF
refresh requirement is exceeded.
2. Measured with t
T
= 1 ns.
3. The reference level is 1.5V when measuring input signal timing. Rise/fall times are measured between V
IH
(min.) and V
IL
(max.).
6. CLK must be toggled a minimum of two times during this period.
Refresh Cycle Time (4096)
—
64
—
64
ms
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S32200-6TI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200-7T | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200-7TI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32400B-7TLI | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32200-6TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200-7T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200-7TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6T | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
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