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| 型號： | IS42S32200-6TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封裝： | 0.400 INCH, TSOP2-86 |
| 文件頁數(shù)： | 9/55頁 |
| 文件大?。?/td> | 982K |
| 代理商： | IS42S32200-6TI |
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IS42S32200
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
Rev. 00B
08/14/03
9
TRUTH TABLE – CURRENT STATE BANK n, COMMAND TO BANK m
(1-6)
CURRENT STATE
COMMAND (ACTION)
CS
RAS
CAS WE
Any
COMMAND INHIBIT (NOP/Continue previous operation)
H
X
X
X
NO OPERATION (NOP/Continue previous operation)
L
H
H
H
Idle
Any Command Otherwise Allowed to Bank m
X
X
X
X
Row
ACTIVE (Select and activate row)
L
L
H
H
Activating,
READ (Select column and start READ burst)
(7)
L
H
L
H
Active, or
WRITE (Select column and start WRITE burst)
(7)
L
H
L
L
Precharging
PRECHARGE
L
L
H
L
Read
ACTIVE (Select and activate row)
L
L
H
H
(Auto
READ (Select column and start new READ burst)
(7,10)
L
H
L
H
Precharge
WRITE (Select column and start WRITE burst)
(7,11)
L
H
L
L
Disabled)
PRECHARGE
(9)
L
L
H
L
Write
ACTIVE (Select and activate row)
L
L
H
H
(Auto
READ (Select column and start READ burst)
(7,12)
L
H
L
H
Precharge
WRITE (Select column and start new WRITE burst)
(7,13)
L
H
L
L
Disabled)
PRECHARGE
(9)
L
L
H
L
Read
ACTIVE (Select and activate row)
L
L
H
H
(With Auto
READ (Select column and start new READ burst)
(7,8,14)
L
H
L
H
Precharge)
WRITE (Select column and start WRITE burst)
(7,8,15)
L
H
L
L
PRECHARGE
(9)
L
L
H
L
Write
ACTIVE (Select and activate row)
L
L
H
H
(With Auto
READ (Select column and start READ burst)
(7,8,16)
L
H
L
H
Precharge)
WRITE (Select column and start new WRITE burst)
(7,8,17)
L
H
L
L
PRECHARGE
(9)
L
L
H
L
NOTE:
1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (Truth Table - CKE) and after t
XSR
has been met (if the previous
state was self refresh).
2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the commands shown
are those allowed to be issued to bank m
(assuming that bank m s in such a state that the given command is allowable)
. Exceptions are
covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and t
RP
has been met.
Row Active: A row in the bank has been activated, and t
RCD
has been met. No data bursts/accesses and no register
accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated.
Read w/Auto
Precharge Enabled:
Starts with registration of a READ command with auto precharge enabled, and ends when t
RP
has been met.
Once t
RP
is met, the bank will be in the idle state.
Write w/Auto
Precharge Enabled:
Starts with registration of a WRITE command with auto precharge enabled, and ends when t
RP
has been
met. Once t
RP
is met, the bank will be in the idle state.
4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only.
6. All states and sequences not shown are illegal or reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S32200-7T | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200-7TI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32400B-7TLI | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6B | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32200-7T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200-7TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6T | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
| IS42S32200B-6TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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