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| 型號： | IS42S32200C1-55T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-86 |
| 文件頁數(shù)： | 31/59頁 |
| 文件大?。?/td> | 623K |
| 代理商： | IS42S32200C1-55T |
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IS42S32200C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00E
05/18/06
31
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
a
D
OUT
a+1
D
OUT
b
D
OUT
b+1
COL a
COL b
CAS Latency - 3 (BANK n)
CAS Latency - 3 (BANK m)
t
RP - BANK n
t
RP - BANK m
RBANK n
BANK m
Page Active
READ with Burst of 4
Interrupt Burst, Precharge
Idle
Page Active
READ with Burst of 4
Precharge
Internal States
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQM
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
a
D
IN
b
D
IN
b+1
D
IN
b+2
D
IN
b+3
COL a
COL b
CAS Latency - 3 (BANK n)
t
RP - BANK n
t
RP - BANK m
BANK n
BANK m
READ with Burst of 4
Interrupt Burst, Precharge
Idle
Page Active
WRITE with Burst of 4
Write-Back
Internal States
Page Active
BURST READ/SINGLE WRITE
The burst read/single write mode is entered by programming
the write burst mode bit
(M9)
in the mode register to a logic 1.
In this mode, all
WRITE
commands result in the access of a
single column location (burst of one), regardless of the
programmed burst length. READ commands access
columns according to the programmed burst length and
sequence, just as in the normal mode of operation (M9 = 0).
CONCURRENT AUTO PRECHARGE
An access command (READ or WRITE) to another bank
while an access command with auto precharge enabled is
executing is not allowed by SDRAMs, unless the SDRAM
supports CONCURRENT AUTO PRECHARGE.
ISSI
SDRAMs support CONCURRENT AUTO PRECHARGE.
Four cases where CONCURRENT AUTO PRECHARGE
occurs are defined below.
READ with Auto Precharge
1. Interrupted by a READ (with or without auto precharge):
A READ to bank m will interrupt a READ on bank n, CAS
latency later. The PRECHARGE to bank n will begin
when the READ to bank m is registered.
2. Interrupted by a WRITE (with or without auto precharge):
A WRITE to bank m will interrupt a READ on bank n
when registered. DQM should be used two clocks prior
to the WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to
bank m is registered.
Fig CAP 1 - READ With Auto Precharge interrupted by a READ
Fig CAP 2 - READ With Auto Precharge interrupted by a WRITE
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| IS42S32200C1-55TL | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-6BL | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-6T | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-6TI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-6TL | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32200C1-55TL | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-55TL-TR | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-55T-TR | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-6BL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-6BLI | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 90-Pin Mini-BGA |
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