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參數(shù)資料
| 型號： | IS42S32200C1-6TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-86 |
| 文件頁數(shù)： | 12/59頁 |
| 文件大?。?/td> | 623K |
| 代理商： | IS42S32200C1-6TI |
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IS42S32200C1
ISSI
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00E
05/18/06
7. READs or WRITEs to bank m listed in the Command (Action) column include READs or WRITEs with auto precharge enabled
and READs or WRITEs with auto precharge disabled.
8. CONCURRENT AUTO PRECHARGE: Bank n will initiate the AUTO PRECHARGE command when its burst has been inter-
rupted by bank m’s burst.
9. Burst in bank n continues as initiated.
10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the
READ on bank n, CAS latency later (Consecutive READ Bursts).
11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt
the READ on bank n when registered (READ to WRITE). DQM should be used one clock prior to the WRITE command to prevent
bus contention.
12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt
the WRITE on bank n when registered (WRITE to READ), with the data-out appearing CAS latency later. The last valid WRITE to
bank n will be data-in registered one clock prior to the READ to bank m.
13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt
the WRITE on bank n when registered (WRITE to WRITE). The last valid WRITE to bank n will be data-in registered one clock
prior to the READ to bank m.
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the
READ on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered (Fig CAP 1).
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the
READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to bank m is registered (Fig CAP 2).
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the
WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after
t
WR
is met, where t
WR
begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered
one clock prior to the READ to bank m (Fig CAP 3).
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the
WRITE on bank n when registered. The PRECHARGE to bank n will begin after t
WR
is met, where t WR begins when the WRITE
to bank m is registered. The last valid WRITE to bank n will be data registered one clock prior to the WRITE to bank m (Fig CAP 4).
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| IS42S32200C1-6TL | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| IS42S32200C1-7B | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-7BI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| IS42S32200C1-6TL | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-6TLI | 功能描述:動態(tài)隨機存取存儲器 64M (2Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-6TLI-TR | 功能描述:動態(tài)隨機存取存儲器 64M (2Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-6TL-TR | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-6T-TR | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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