參數資料
型號： IS42S32400B-7BLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述： 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封裝： LEAD FREE, FBGA-90
文件頁數： 9/60頁
文件大?。?/td> 644K
代理商： IS42S32400B-7BLI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00G
06/15/06
9
ISSI
IS42S32400B
Current State
Idle
CS
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
RAS
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
CAS
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
WE
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
Address
X
X
X
BA, CA, A10
A, CA, A10
BA, RA
BA, A10
X
OC, BA1=L
X
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
Command
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
Action
Nop or Power Down
(2)
Nop or Power Down
(2)
Nop or Power Down
ILLEGAL
(3)
ILLEGAL
(3)
Row activating
Nop
Auto refresh or Self-refresh
(4)
Mode register set
Nop
Nop
Nop
Begin read
(5)
Begin write
(5)
ILLEGAL
(3)
Precharge
Precharge all banks
(6)
ILLEGAL
ILLEGAL
Continue burst to end to
Row active
Continue burst to end Row
Row active
Burst stop, Row active
Terminate burst,
begin new read
(7)
Terminate burst,
begin write
(7,8)
ILLEGAL
(3)
Terminate burst
Precharging
ILLEGAL
ILLEGAL
Continue burst to end
Write recovering
Continue burst to end
Write recovering
Burst stop, Row active
Terminate burst, start read :
Determine AP
(7,8)
Terminate burst, new write :
Determine AP
(7)
ILLEGAL
(3)
Terminate burst Precharging
(9)
ILLEGAL
ILLEGAL
Row Active
L
L
H
L
L
X
L
L
X
H
L
X
X
OC, BA
X
REF/SELF
MRS
DESL
Read
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA, CA, A10
BST
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
L
L
H
H
H
L
BA, RA
BA, A10
ACT
PRE/PALL
L
L
H
L
L
X
L
L
X
H
L
X
X
OC, BA
X
REF/SELF
MRS
DESL
Write
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA, CA, A10
BST
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
L
L
L
L
L
L
H
H
L
L
H
L
H
L
BA, RA
BA, A10
X
OC, BA
RA ACT
PRE/PALL
REF/SELF
MRS
FUNCTIONAL TRUTH TABLE
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關PDF資料
PDF描述
IS42S32400B-7T 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7TI 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7TL 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32800B 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6B 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
相關代理商/技術參數
參數描述
IS42S32400B-7BLI-TR 功能描述:動態(tài)隨機存取存儲器 128M (4Mx32) 143MHz Industrial Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32400B-7BL-TR 功能描述:動態(tài)隨機存取存儲器 128M (4Mx32) 143MHz Commercial Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32400B-7B-TR 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 90FBGA
IS42S32400B-7T 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 86TSOP 制造商:Integrated Silicon Solution Inc 功能描述:DRAM (Dynamic RAM)
IS42S32400B-7TI 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 86TSOP
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