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| 型號： | IS42S81600A-7T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 10/65頁 |
| 文件大?。?/td> | 556K |
| 代理商： | IS42S81600A-7T |
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ISSI
18
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCEDINFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VDD MAX
Maximum Supply Voltage
–0.5 to +3.6
–0.5 to +4.6
V
VDDQMAX
Maximum Supply Voltage for Output Buffer
–0.5 to +3.6
–0.5 to
+4.6
V
VIN
Input Voltage
–0.5 to +3.6
–0.5 to +4.6
V
VOUT
Output Voltage
–0.5 to +3.6
–0.5 to +4.6
V
PD MAX
Allowable Power Dissipation
1
W
ICS
Output Shorted Current
50
mA
TOPR
Operating Temperature
Com.
0 to +70
°C
Ind.
–40 to +85
TSTG
Storage Temperature
–55 to +125
°C
DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)
42LSxxxxxx
42Sxxxxxx
Symbol
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
2.3
2.5
2.7
3.0
3.3
3.6
V
VDDQ
I/O Supply Voltage
1.65
2.0
2.5
3.0
3.3
3.6
V
VIH(1)
Input High Voltage
0.8xVDDQ
—VDDQ + 0.3
2.0
—
VDDQ + 0.3
V
VIL(2)
Input Low Voltage
-0.3
—
+0.3
-0.3
—
+0.8
V
CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, Vdd = VddQ= 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
CIN1
Input Capacitance: A0-A11, BA0, BA1
—
3.5
pF
CIN2
Input Capacitance: (CLK, CKE,
CS, RAS, CAS, WE, LDQM, UDQM)
—
3.8
pF
CI/O
Data Input/Output Capacitance: I/O0-I/O15
—
6.5
pss.
Note:
1. VIH (max) = VDDQ +1.5V (PULSE WIDTH < 5NS).
2. VIL (min) = -1.5V (PULSE WIDTH < 5NS).
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S81600A-7TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-7TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-7TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600AL-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S81600B-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
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