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參數(shù)資料
| 型號： | IS45LV44002B-50JA1 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 4M X 4 EDO DRAM, 50 ns, PDSO24 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-24 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大小： | 137K |
| 代理商： | IS45LV44002B-50JA1 |
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
09/12/05
IS45LV44002B
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
Symbol
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
Parameter
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(23)
CAS
Precharge Time
(9)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
Column-Address Hold Time
(referenced to
RAS
)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
RAS
Hold Time from
CAS
Precharge
CAS
to Output in Low-Z
(15, 24)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 24)
Output Enable Time
(15, 16)
Output Enable Data Delay (Write)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17)
Write Command Hold Time
(referenced to
RAS
)
(17)
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Min.
84
—
—
—
50
30
8
9
38
12
0
8
0
8
30
Max.
—
50
13
25
10K
—
10K
—
—
37
—
—
—
—
—
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RAD
t
RAL
t
RPC
t
RSH
t
RHCP
t
CLZ
t
CRP
t
OD
t
OE
t
OED
t
OEHC
t
OEP
t
OES
t
RCS
t
RRH
10
25
5
8
30
0
5
3
—
12
5
10
5
0
0
25
—
—
—
—
—
—
15
12
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
—
ns
t
WCH
t
WCR
8
40
—
—
ns
ns
t
WP
t
WPZ
8
7
—
—
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS45LV44002B-50JLA1 | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS45S16100C1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS45LV44002B-50JLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS45S | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NC |
| IS45S16100C1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA1 | 功能描述:動態(tài)隨機存取存儲器 64M (4Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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