參數(shù)資料
型號(hào): IS45LV44002B
廠商: Integrated Silicon Solution, Inc.
英文描述: 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 4米× 4(16兆)動(dòng)態(tài)與江戶頁(yè)面模式內(nèi)存
文件頁(yè)數(shù): 4/20頁(yè)
文件大小: 137K
代理商: IS45LV44002B
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
09/12/05
IS45LV44002B
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
–0.5 to +4.6
V
V
DD
Supply Voltage
–0.5 to +4.6
V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Operating Temperature
-40 to +85
°C
T
STG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
3.0
3.3
3.6
V
V
IH
Input High Voltage
2.0
V
DD
+ 0.3
V
V
IL
Input Low Voltage
–0.3
0.8
V
T
A
Automotive Ambient Temperature (A1)
-40
+85
°C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A10
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
相關(guān)PDF資料
PDF描述
IS45LV44002B-50JA1 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS45LV44002B-50JLA1 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1-7BLA 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1-7BLA1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS45LV44002B-50JA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS45LV44002B-50JLA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS45S 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NC
IS45S16100C1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1-7BLA 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM