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參數(shù)資料
| 型號(hào)： | IS45S16100C1 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 為512k字× 16位× 2銀行（16兆）同步動(dòng)態(tài)RAM |
| 文件頁(yè)數(shù)： | 36/81頁(yè) |
| 文件大?。?/td> | 821K |
| 代理商： | IS45S16100C1 |
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IS45S16100C1
ISSI
36
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/03/06
Bank Active Command Interval
When the selected bank is precharged, the period trp
has elapsed and the bank has entered the idle state, the
bank can be activated by executing the active
command. If the other bank is in the idle state at that
time, the active command can be executed for that bank
after the period t
RRD
has elapsed. At that point both
banks will be in the active state. When a bank active
command has been executed, a precharge command
must be executed for
that bank within the ACT to PRE command period (t
RAS
max). Also note that a precharge command cannot be
executed for an active bank before t
RAS
(min) has elapsed.
After a bank active command has been executed and the
trcd period has elapsed, read write (including auto-precharge)
commands can be executed for that bank.
ACT 0
ACT 1
COMMAND
CLK
BANK ACTIVE (BANK 0)
BANK ACTIVE (BANK 1)
t
RRD
ACT 0
READ 0
COMMAND
CLK
BANK ACTIVE (BANK 0)
BANK ACTIVE (BANK 0)
t
RCD
CAS
latency = 3
Clock Suspend
When the CKE pin is dropped from HIGH to LOW during a
read or write cycle, the IS45S16100C1 enters clock suspend
mode on the next CLK rising edge. This command reduces
the device power dissipation by stopping the device internal
clock. Clock suspend mode continues as long as the CKE
pin remains low. In this state, all inputs other than CKE pin
are invalid and no other commands can be executed. Also,
the device internal states are maintained. When the CKE
pin goes from LOW to HIGH clock suspend mode is
terminated on the next CLK rising edge and device operation
resumes.
The next command cannot be executed until the recovery
period (t
CKA
) has elapsed.
Since this command differs from the self-refresh command
described previously in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tref). Thus the
maximum time that clock suspend mode can be held is just
under the refresh cycle time.
READ 0
COMMAND
CKE
DQ
CLK
D
OUT
0
D
OUT
1
D
OUT
2
D
OUT
3
READ (BANK 0)
CLOCK SUSPEND
CAS
latency = 2, burstlength = 4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS45S16100C1-7BLA | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TLA | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TLA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS45S16100C1-7BLA | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA1 | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M (4Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100C1-7BLA1-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100C1-7TA1 | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TLA | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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