參數(shù)資料
型號(hào)： IS45S16800B-7TA1
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
中文描述： 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 28/59頁(yè)
文件大?。?/td> 593K
代理商： IS45S16800B-7TA1
ISSI
28
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/14/06
IS45S81600B, IS45S16800B
possible CAS latency; data element n + 3 is either the last of
a burst of four or the last desired of a longer burst. Following
the PRECHARGE command, a subsequent command to the
same bank cannot be issued until t
RP
is met. Note that part
of the row precharge time is hidden during the access of the
last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the opti-
mum time (as described above) provides the same opera-
tion that would result from the same fixed-length burst with
auto precharge. The disadvantage of the PRECHARGE
command is that it requires that the command and address
buses be available at the appropriate time to issue the
command; the advantage of the PRECHARGE command is
that it can be used to truncate fixed-length or full-page
bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST
TERMINATE command should be issued x cycles before
the clock edge at which the last desired data element is
valid, where x equals the CAS latency minus one. This is
shown in the READ Burst Termination diagram for each
possible CAS latency; data element n + 3 is the last desired
data element of a longer burst.
相關(guān)PDF資料
PDF描述
IS45S16800B-7TLA 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S16800B-7TLA1 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S81600B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S81600B-7TA 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S81600B-7TA1 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS45S16800B-7TLA 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S16800B-7TLA1 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (8Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS45S16800B-7TLA1-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (8Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS45S16800E 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
IS45S16800E-6BLA1 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (8Mx16) 166MHz S動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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