參數(shù)資料
型號(hào)： IS45S16800B-7TA
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
中文描述： 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 15/59頁(yè)
文件大?。?/td> 593K
代理商： IS45S16800B-7TA
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/14/06
15
ISSI
IS45S81600B, IS45S16800B
DC ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operation Conditions unless otherwise noted.)
Symbol
I
DD1
(1)
Parameter
Operating Current
Test Condition
One bank active, CL = 3, BL = 1,
t
CLK
= t
CLK
(min), t
RC
= t
RC
(min)
CKE
≤
V
IL
(
MAX
), t
CK
= 15ns
-7
100
120
2
Unit
mA
mA
mA
x8
x16
I
DD2P
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
x8 / x16
I
DD2PS
CKE
≤
V
IL
(
MAX
), CLK
≤
V
IL
(
MAX
)
x8 / x16
1
mA
I
DD2N
(2)
CS
≥
Vcc - 0.2V, CKE
≥
V
IH
(
MIN
)
t
CK
= 15ns
CS
≥
Vcc - 0.2V, CKE
≥
V
IH
(
MIN
) or
CKE
≤
V
IL
(
MAX
), All nputs stable
CS
≥
Vcc - 0.2V, CKE
≥
V
IH
(
MIN
)
t
CK
= 15ns
CS
≥
Vcc - 0.2V, CKE
≥
V
IH
(
MIN
) or
CKE
≤
V
IL
(
MAX
), All nputs stable
All banks active, BL = 4, CL = 3,
t
CK
= t
CK
(min)
t
RC
= t
RC
(min), t
CLK
= t
CLK
(min)
CKE
≤
0.2V
x8 / x16
25
mA
I
DD2NS
x8 / x16
15
mA
I
DD3N
(2)
x8 / x16
30
mA
I
DD3NS
x8 / x16
20
mA
I
DD4
x8
120
130
160
2
mA
mA
mA
mA
x16
I
DD5
I
DD6
Auto-Refresh Current
Self-Refresh Current
x8 / x16
x8 / x16
Notes:
1. I
DD
(
MAX
) is specified at the output open condition.
2. Input signals are changed one time during 30ns.
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol
I
IL
Parameter
Input Leakage Current
Test Condition
0V
≤
Vin
≤
Vcc, with pins other than
the tested pin at 0V
Output is disabled, 0V
≤
Vout
≤
Vcc,
I
OH
= -2mA
I
OL
= 2mA
Min
-10
Max
10
Unit
μ
A
I
OL
V
OH
V
OL
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
-5
2.4
—
5
—
0.4
μ
A
V
V
相關(guān)PDF資料
PDF描述
IS45S16800B-7TA1 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S16800B-7TLA 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S16800B-7TLA1 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S81600B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S81600B-7TA 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS45S16800B-7TA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S16800B-7TLA 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S16800B-7TLA1 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (8Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS45S16800B-7TLA1-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (8Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS45S16800E 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
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