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參數(shù)資料
| 型號(hào)： | IS45S32200C1-7TA1 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-86 |
| 文件頁數(shù)： | 1/59頁 |
| 文件大?。?/td> | 622K |
| 代理商： | IS45S32200C1-7TA1 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/18/06
1
IS45S32200C1
512K Bits x 32 Bits x 4 Banks (64-MBIT)
SYNCHRONOUS DYNAMIC RAM
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Clock frequency: 143 MHz
Fully synchronous; all signals referenced to a
positive clock edge
Internal bank for hiding row access/precharge
Single 3.3V power supply
LVTTL interface
Programmable burst length:
(1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Self refresh modes
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Automotive Temperature Grade
Option A: 0
o
C to +70
o
C
Option A1: -40
o
C to +85
o
C
Package 400-mil 86-pin TSOP II and 90-ball BGA
Lead free package is available
OVERVIEW
ISSI
's 64Mb Synchronous DRAM IS45S32200C1 is
organized as 524,288 bits x 32-bit x 4-bank for improved
performance. The synchronous DRAMs achieve high-
speed data transfer using pipeline architecture. All inputs
and outputs signals refer to the rising edge of the clock
input.
JULY 2006
KEY TIMING PARAMETERS
Parameter
-7
Unit
Clk Cycle Time
CAS
Latency = 3
CAS
Latency = 2
7
10
ns
ns
Clk Frequency
CAS
Latency = 3
CAS
Latency = 2
143
100
Mhz
Mhz
Access Time from Clock
CAS
Latency = 3
CAS
Latency = 2
5.5
8
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS45S32200C1-7TLA | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7TLA1 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32400B | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS45S32400B-6BA1 | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS45S32400B-6BLA1 | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS45S32200C1-7TLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200E-6BLA1 | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M (2Mx32) 166MHz S動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S32200E-6BLA1-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M (2Mx32) 166MHz S動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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