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參數(shù)資料
| 型號： | IS45S32200C1-7TLA1 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86 |
| 文件頁數(shù)： | 5/59頁 |
| 文件大?。?/td> | 622K |
| 代理商： | IS45S32200C1-7TLA1 |
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IS45S32200C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/18/06
5
PIN FUNCTIONS
Symbol
Pin No.(TSOP)
Type
Function (In Detail)
A0-A10
25 to 27
60 to 66
24
Input Pin
Address Inputs: A0-A10 are sampled during the ACTIVE
command (row-address A0-A10) and READ/WRITE command (A0-A7
with A10 defining auto precharge) to select one location out of the memory array
in the respective bank. A10 is sampled during a PRECHARGE command to
determine if all banks are to be precharged (A10 HIGH) or bank selected by
BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD
MODE REGISTER command.
BA0, BA1
22,23
Input Pin
Bank Select Address: BA0 and BA1 defines which bank the ACTIVE, READ,
WRITE or PRECHARGE command is being applied.
CAS
18
Input Pin
CAS
, in conjunction with the
RAS
and
WE
, forms the device command. See the
"Command Truth Table" for details on device commands.
CKE
67
Input Pin
The CKE input determines whether the CLK input is enabled. The next rising edge
of the CLK signal will be valid when is CKE HIGH and invalid when LOW. When
CKE is LOW, the device will be in either power-down mode, clock suspend mode,
or self refresh mode.
CKE is an
asynchronous i
nput.
CLK
68
Input Pin
CLK is the master clock input for this device. Except for CKE, all inputs to this
device are acquired in synchronization with the rising edge of this pin.
CS
20
Input Pin
The
CS
input determines whether command input is enabled within the device.
Command input is enabled when
CS
is LOW, and disabled with
CS
is HIGH. The
device remains in the previous state when
CS
is HIGH.
DQ0 to
DQ31
2, 4, 5, 7, 8, 10,11,13
74,76,77,79,80,82,83,85
45,47,48,50,51,53,54,56
31,33,34,36,37,39,40,42
DQ Pin
DQ0 to DQ15 are DQ pins. DQ through these pins can be controlled in byte units
using the DQM0-DQM3 pins
DQM0
DQM3
16,28,59,71
Input Pin
DQMx control thel ower and upper bytes of the DQ buffers. In read mode,
the output buffers are place in a High-Z state. During a WRITE cycle the input data is
masked. When DQMx is sampled HIGH and is an input mask signal for write accesses
and an output enable signal for read accesses. DQ0 through DQ7 are controlled by
DQM0. DQ8 throughDQ15 are controlled by DQM1. DQ16 through DQ23 are
controlled by DQM2. DQ24 through DQ31 are controlled by DQM3.
RAS
19
Input Pin
RAS
, in conjunction with
CAS
and
WE
, forms the device command. See the "Command
Truth Table" item for details on device commands.
WE
17
Input Pin
WE
, in conjunction with
RAS
and
CAS
, forms the device command. See the "Command
Truth Table" item for details on device commands.
V
DDQ
3,9,35,41,49,55,75,81
Supply Pin
V
DDQ
is the output buffer power supply.
V
DD
1,15,29,43
Supply Pin
V
DD
is the device internal power supply.
GND
Q
6,12,32,38,46,52,78,84
Supply Pin
GND
Q
is the output buffer ground.
GND
44,58,72,86
Supply Pin
GND is the device internal ground.
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| IS45S32200E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200E-6BLA1 | 功能描述:動態(tài)隨機(jī)存取存儲器 64M (2Mx32) 166MHz S動態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S32200E-6BLA1-TR | 功能描述:動態(tài)隨機(jī)存取存儲器 64M (2Mx32) 166MHz S動態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S32200E-6TLA1 | 功能描述:動態(tài)隨機(jī)存取存儲器 64M (2Mx32) 166MHz S動態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S32200E-6TLA1-TR | 功能描述:動態(tài)隨機(jī)存取存儲器 64M (2Mx32) 166MHz S動態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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