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參數(shù)資料
| 型號(hào)： | IS61C1024-20H |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 20 ns, PDSO32 |
| 封裝： | 8 X 13.40 MM, STSOP1-32 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | IS61C1024-20H |
IS61C1024
IS61C1024L
128K x 8 HIGH-SPEED
CMOS STATIC RAM
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
DESCRIPTION
The
ISSI
IS61C1024 and IS61C1024L are very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using ISSIs high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and low
power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS61C1024 and IS61C1024L are available in 32-pin
300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,
8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE1
CE2
OE
WE
512 x 2048
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
FEATURES
High-speed access time: 12, 15, 20, 25 ns
Low active power: 600 mW (typical)
Low standby power: 500
μ
W (typical) CMOS
standby
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (
±
10%) power supply
Low power version available: IS61C1024L
Commercial and industrial temperature ranges
available
MAY 1999
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61C1024-20HI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-20J | RES POWER .100 OHM 2W 5% SMT |
| IS61C1024-20K | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-20KI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-20T | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C1024-20HI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-20J | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 20ns 32-Pin SOJ |
| IS61C1024-20JI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-20K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-20KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
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