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參數(shù)資料
| 型號(hào)： | IS61C1024-20T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 20 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP1-32 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 80K |
| 代理商： | IS61C1024-20T |
IS61C1024
IS61C1024L
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
3
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
1.5
20
Unit
V
°
C
°
C
W
mA
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
μ
A
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
Ind.
–2
–5
2
5
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
Outputs Disabled
Com.
Ind.
–2
–5
2
5
μ
A
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61C1024-20TI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-25H | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-25HI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-25J | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-25JI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C1024-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-25H | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-25HI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-25J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-25JI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
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