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參數(shù)資料
| 型號： | IS61C1024AL-12JI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-32 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IS61C1024AL-12JI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
01/24/05
3
IS61C1024AL, IS64C1024AL
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
DD
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
Com.
Ind.
Auto.
–1
–2
–5
1
2
5
μA
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
DD
Outputs Disabled
Com.
Ind.
Auto.
–1
–2
–5
1
2
5
μA
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
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| IS61C1024AL-12JLI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024AL-12KI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024AL-12KLI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024AL-12T | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024AL-12TI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C1024AL-12JI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 12ns 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C1024AL-12JLI | 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 12ns 5v Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C1024AL-12JLI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM 制造商:Integrated Silicon Solution Inc 功能描述:IC, SRAM, 1MBIT, 12NS, SOJ-32 |
| IS61C1024AL-12JLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 12ns 5v Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C1024AL-12KI | 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 12ns 5v Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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