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參數(shù)資料
| 型號： | IS61C3216-12T |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K的× 16 HIGH-SPEED的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 432K |
| 代理商： | IS61C3216-12T |
IS61C3216
4
Integrated Circuit Solution Inc.
SR008-0B
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
-15
-20
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
t
RC
Read Cycle Time
10
—
12
—
15
—
20
—
ns
t
AA
Address Access Time
—
10
—
12
—
15
—
20
ns
t
OHA
Output Hold Time
3
—
3
—
3
—
3
—
ns
t
ACE
CE
Access Time
—
10
—
12
—
15
—
20
ns
t
DOE
OE
Access Time
—
5
—
5
—
7
—
8
ns
t
HZOE
(2)
OE
to High-Z Output
0
5
0
6
0
7
—
8
ns
t
LZOE
(2)
OE
to Low-Z Output
0
—
0
—
0
—
0
—
ns
t
HZCE
(2
CE
to High-Z Output
0
5
0
6
0
7
0
8
ns
t
LZCE
(2)
CE
to Low-Z Output
4
—
4
—
4
—
4
—
ns
t
BA
LB
,
UB
Access Time
—
5
—
6
—
7
—
8
ns
t
HZB
LB
,
UB
to High-Z Output
0
5
0
6
0
7
—
8
ns
t
LZB
LB
,
UB
to Low-Z Output
5
—
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1a and 1b
AC TEST LOADS
Figure 1a.
Figure 1b.
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61C3216-12TI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15K | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15KI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15T | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15TI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C3216-12TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
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