參數(shù)資料
型號： IS61LF102418A-6.5TQI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述： 1M X 18 CACHE SRAM, 6.5 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, TQFP-100
文件頁數(shù)： 13/35頁
文件大小： 281K
代理商： IS61LF102418A-6.5TQI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
04/21/06
13
ISSI
IS61LF25672A IS61LF51236A IS61LF102418A
IS61VF25672A IS61VF51236A IS61VF102418A
INTERLEAVED BURST ADDRESS TABLE (MODE = V
DD
or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
T
STG
P
D
I
OUT
V
IN
, V
OUT
Voltage Relative to Vss for I/O Pins
V
IN
Voltage Relative to Vss for
for Address and Control Inputs
V
DD
Voltage on V
DD
Supply Relative to Vss
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Value
–55 to +150
1.6
100
–0.5 to V
DDQ
+ 0.5
–0.5 to V
DD
+ 0.5
Unit
°C
W
mA
V
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
相關(guān)PDF資料
PDF描述
IS61LF102418A-7.5B2 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102418A-7.5B2I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102418A-7.5B3 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102418A-7.5B3I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102418A-7.5TQ 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LF102418A-7.5B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102418A-7.5B2I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102418A-7.5B3 功能描述:靜態(tài)隨機(jī)存取存儲器 18Mb 1Mbx18 7.5ns Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LF102418A-7.5B3I 功能描述:靜態(tài)隨機(jī)存取存儲器 18Mb,Flow-Through,Sync,1Mb x 18,7.5ns,3.3v or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LF102418A-7.5B3I-TR 功能描述:靜態(tài)隨機(jī)存取存儲器 18Mb,Flow-Through,Sync,1Mb x 18,7.5ns,3.3v or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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