參數(shù)資料
型號： IS61LF102418A-7.5B3I
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述： 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
封裝： 13 X 15 MM, PLASTIC,BGA-165
文件頁數(shù)： 11/35頁
文件大?。?/td> 281K
代理商： IS61LF102418A-7.5B3I
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
04/21/06
11
ISSI
IS61LF25672A IS61LF51236A IS61LF102418A
IS61VF25672A IS61VF51236A IS61VF102418A
TRUTH TABLE
(1-8)
(3CE option)
OPERATION
ADDRESS
CE
CE2
CE2
ZZ
ADSP ADSC
ADV WRITE
OE
CLK
DQ
Deselect Cycle, Power-Down
None
H
X
X
L
X
L
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
L
L
X
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
L
X
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
L
H
L
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
H
L
X
X
X
L-H
High-Z
Snooze Mode, Power-Down
None
X
X
X
H
X
X
X
X
X
X
High-Z
Read Cycle, Begin Burst
External
L
L
H
L
L
X
X
X
L
L-H
Q
Read Cycle, Begin Burst
External
L
L
H
L
L
X
X
X
H
L-H
High-Z
Write Cycle, Begin Burst
External
L
L
H
L
H
L
X
L
X
L-H
D
Read Cycle, Begin Burst
External
L
L
H
L
H
L
X
H
L
L-H
Q
Read Cycle, Begin Burst
External
L
L
H
L
H
L
X
H
H
L-H
High-Z
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
High-Z
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
High-Z
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
High-Z
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
High-Z
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For
WRITE
, L means one or more byte write enable signals (
BWa-h
) and
BWE
are LOW or
GW
is LOW.
WRITE
= H for all
BWx
,
BWE
,
GW
HIGH.
3.
BWa
enables WRITEs to DQa’s and DQPa.
BWb
enables WRITEs to DQb’s and DQPb.
BWc
enables WRITEs to DQc’s and
DQPc.
BWd
enables WRITEs to DQd’s and DQPd.
BWe
enables WRITEs to DQe’s and DQPe.
BWf
enables WRITEs to DQf’s
and DQPf.
BWg
enables WRITEs to DQg’s and DQPg.
BWh
enables WRITEs to DQh’s and DQPh. DQPa-DQPh are available
on the x72 version. DQPa and DQPb are available on the x18 version. DQPa-DQPd are available on the x36 version.
4. All inputs except
OE
and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation,
OE
must be HIGH before the input data setup time and held HIGH during
the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8.
ADSP
LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write
enable signals and
BWE
LOW or
GW
LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.
相關PDF資料
PDF描述
IS61LF102418A-7.5TQ 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102418A-7.5TQI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102418A-7.5TQLI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF6432A 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF6432A-8.5TQI 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
IS61LF102418B-7.5TQLI 功能描述:IC SRAM 18MBIT 7.5NS 100TQFP 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:18M（1M x 18） 速度:7.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:100-LQFP 供應商器件封裝:100-LQFP（14x20） 標準包裝:72
IS61LF102436A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102436A-6.5B3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102436A-6.5B3I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102436A-6.5TQL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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