參數(shù)資料
型號: IS61LF102418A-7.5TQLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述: 1M X 18 CACHE SRAM, 7.5 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100
文件頁數(shù): 14/35頁
文件大?。?/td> 281K
代理商: IS61LF102418A-7.5TQLI
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
04/21/06
ISSI
IS61LF25672A IS61LF51236A IS61LF102418A
IS61VF25672A IS61VF51236A IS61VF102418A
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
6.5
MAX
x18
7.5
MAX
Symbol
Parameter
Test Conditions
Temp. range
x36
x72
x18
x36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
V
IL
,
All Inputs
0.2V or
V
DD
– 0.2V,
Cycle Time
t
KC
min.
Com.
Ind.
250
275
250
275
300
350
240
250
240
250
mA
I
SB
Standby Current
TTL Input
Device Deselected,
V
DD
= Max.,
All Inputs
V
IL
or
V
IH
,
ZZ
V
IL
, f = Max.
Com.
Ind.
140
150
140
150
140
150
140
150
140
150
mA
I
SBI
Standby Current
CMOS Input
Device Deselected,
V
DD
= Max.,
V
IN
V
SS
+ 0.2V or
V
DD
– 0.2V
f = 0
Com.
Ind.
110
125
110
125
110
125
110
125
110
125
mA
I
SB
2
Sleep Mode
ZZ>V
IH
Com.
Ind.
60
75
60
75
60
75
60
75
60
75
mA
Note:
1. MODE pin has an internal pullup and should be tied to V
DD
or V
SS
. It exhibits ±100 μA maximum leakage current when tied to
V
SS
+ 0.2V or
V
DD
– 0.2V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
3.3V
2.5V
Symbol
V
OH
Parameter
Output HIGH Voltage
Test Conditions
I
OH
= –4.0 mA (3.3V)
I
OH
= –1.0 mA
I
OL
= 8.0 mA (3.3V)
I
OL
= 1.0 mA (2.5V)
Min.
2.4
Max.
Min.
2.0
Max.
Unit
V
(2.5V)
V
OL
Output LOW Voltage
0.4
0.4
V
V
IH
V
IL
I
LI
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
2.0
–0.3
–5
V
DD
+ 0.3
0.8
5
1.7
–0.3
–5
V
DD
+ 0.3
0.7
5
V
V
μA
V
SS
V
IN
V
DD
(1)
V
SS
V
OUT
V
DDQ
,
OE
= V
IH
I
LO
Output Leakage Current
–5
5
–5
5
μA
OPERATING RANGE (IS61LFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
V
DD
V
DDQ
3.3V ± 5%
3.3V ± 5%
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
OPERATING RANGE (IS61VFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
V
DD
V
DDQ
2.5V ± 5%
2.5V ± 5%
2.5V ± 5%
2.5V ± 5%
Note:
1. V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
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相關代理商/技術參數(shù)
參數(shù)描述
IS61LF102418B-7.5TQLI 功能描述:IC SRAM 18MBIT 7.5NS 100TQFP 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:18M(1M x 18) 速度:7.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C(TA) 封裝/外殼:100-LQFP 供應商器件封裝:100-LQFP(14x20) 標準包裝:72
IS61LF102436A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102436A-6.5B3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102436A-6.5B3I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF102436A-6.5TQL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM