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| 型號： | IS61LF25672A-6.5B1I |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 中文描述： | 256K X 72 CACHE SRAM, 6.5 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 |
| 文件頁數(shù)： | 14/35頁 |
| 文件大?。?/td> | 281K |
| 代理商： | IS61LF25672A-6.5B1I |
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14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
04/21/06
ISSI
IS61LF25672A IS61LF51236A IS61LF102418A
IS61VF25672A IS61VF51236A IS61VF102418A
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
6.5
MAX
x18
7.5
MAX
Symbol
Parameter
Test Conditions
Temp. range
x36
x72
x18
x36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
≤
V
IL
,
All Inputs
≤
0.2V or
≥
V
DD
– 0.2V,
Cycle Time
≥
t
KC
min.
Com.
Ind.
250
275
250
275
300
350
240
250
240
250
mA
I
SB
Standby Current
TTL Input
Device Deselected,
V
DD
= Max.,
All Inputs
≤
V
IL
or
≥
V
IH
,
ZZ
≤
V
IL
, f = Max.
Com.
Ind.
140
150
140
150
140
150
140
150
140
150
mA
I
SBI
Standby Current
CMOS Input
Device Deselected,
V
DD
= Max.,
V
IN
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V
f = 0
Com.
Ind.
110
125
110
125
110
125
110
125
110
125
mA
I
SB
2
Sleep Mode
ZZ>V
IH
Com.
Ind.
60
75
60
75
60
75
60
75
60
75
mA
Note:
1. MODE pin has an internal pullup and should be tied to V
DD
or V
SS
. It exhibits ±100 μA maximum leakage current when tied to
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
3.3V
2.5V
Symbol
V
OH
Parameter
Output HIGH Voltage
Test Conditions
I
OH
= –4.0 mA (3.3V)
I
OH
= –1.0 mA
I
OL
= 8.0 mA (3.3V)
I
OL
= 1.0 mA (2.5V)
Min.
2.4
Max.
—
Min.
2.0
Max.
—
Unit
V
(2.5V)
V
OL
Output LOW Voltage
—
0.4
—
0.4
V
V
IH
V
IL
I
LI
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
2.0
–0.3
–5
V
DD
+ 0.3
0.8
5
1.7
–0.3
–5
V
DD
+ 0.3
0.7
5
V
V
μA
V
SS
≤
V
IN
≤
V
DD
(1)
V
SS
≤
V
OUT
≤
V
DDQ
,
OE
= V
IH
I
LO
Output Leakage Current
–5
5
–5
5
μA
OPERATING RANGE (IS61LFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
V
DD
V
DDQ
3.3V ± 5%
3.3V ± 5%
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
OPERATING RANGE (IS61VFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
V
DD
V
DDQ
2.5V ± 5%
2.5V ± 5%
2.5V ± 5%
2.5V ± 5%
Note:
1. V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LF25672A | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF25672A-6.5B1 | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-6.5B2 | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-6.5B2I | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LF409618B-6.5B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF409618B-6.5B2I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF409618B-6.5B2L | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF409618B-6.5B2LI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF409618B-6.5B3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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