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| 型號(hào)： | IS61LF51218A-6.5B2 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 中文描述： | 512K X 18 CACHE SRAM, 6.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, PLASTIC, BGA-119 |
| 文件頁(yè)數(shù)： | 15/32頁(yè) |
| 文件大?。?/td> | 215K |
| 代理商： | IS61LF51218A-6.5B2 |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/05
15
ISSI
IS61LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
READ/WRITE CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
6.5
7.5
Min. Max.
Symbol
Parameter
Min.
Max.
Unit
fmax
Clock Frequency
—
133
—
117
MHz
t
KC
Cycle Time
7.5
—
8.5
—
ns
t
KH
Clock High Time
2.2
—
2.5
—
ns
t
KL
Clock Low Time
2.2
—
2.5
—
ns
t
KQ
Clock Access Time
—
6.5
—
7.5
ns
t
KQX
(2)
Clock High to Output Invalid
2.5
—
2.5
—
ns
t
KQLZ
(2,3)
Clock High to Output Low-Z
2.5
—
2.5
—
ns
t
KQHZ
(2,3)
Clock High to Output High-Z
—
3.8
—
4.0
ns
t
OEQ
Output Enable to Output Valid
—
3.2
—
3.4
ns
t
OELZ
(2,3)
Output Enable to Output Low-Z
0
—
0
—
ns
t
OEHZ
(2,3)
Output Disable to Output High-Z
—
3.5
—
3.5
ns
t
AS
Address Setup Time
1.5
—
1.5
—
ns
t
WS
Read/Write Setup Time
1.5
—
1.5
—
ns
t
CES
Chip Enable Setup Time
1.5
—
1.5
—
ns
t
AVS
Address Advance Setup Time
1.5
—
1.5
—
ns
t
DS
Data Setup Time
1.5
—
1.5
—
ns
t
AH
Address Hold Time
0.5
—
0.5
—
ns
t
WH
Write Hold Time
0.5
—
0.5
—
ns
t
CEH
Chip Enable Hold Time
0.5
—
0.5
—
ns
t
AVH
Address Advance Hold Time
0.5
—
0.5
—
ns
t
DH
Data Hold Time
0.5
—
0.5
—
ns
t
PDS
ZZ High to Power Down
—
2
—
2
cyc
t
PUS
ZZ Low to Power Down
—
2
—
2
cyc
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LF51218A-6.5B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5TQ | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5TQI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LF51218A-7.5B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5B2I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5B3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5B3I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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