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參數(shù)資料
| 型號(hào)： | IS61LF51218A-6.5B3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 中文描述： | 512K X 18 CACHE SRAM, 6.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, PLASTIC, BGA-165 |
| 文件頁數(shù)： | 23/32頁 |
| 文件大小： | 215K |
| 代理商： | IS61LF51218A-6.5B3 |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/05
23
ISSI
IS61LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
TAP Electrical Characteristics
Over the Operating Range
(1,2)
Symbol
Parameter
Test Conditions
Min.
Max.
Units
V
OH1
Output HIGH Voltage
I
OH
= –2.0 mA
I
OH
= –100
μ
A
I
OL
= 2.0 mA
I
OL
= 100
μ
A
1.7
—
V
V
OH2
Output HIGH Voltage
2.1
—
V
V
OL1
Output LOW Voltage
—
0.7
V
V
OL2
Output LOW Voltage
—
0.2
V
V
IH
Input HIGH Voltage
1.7
V
DD
+0.3
V
V
IL
Input LOW Voltage
I
OLT
= 2mA
Vss
≤
V I
≤
V
DDQ
–0.3
0.7
V
I
X
Input Load Current
–5
5
mA
Notes:
1. All Voltage referenced to Ground.
2. Overshoot: V
IH
(AC)
≤
V
DD
+1.5V for t
≤
t
TCYC
/2,
Undershoot: Vil (AC)
≤
0.5V for t
≤
t
TCYC
/2,
Power-up: V
IH
< 2.6V and V
DD
< 2.4V and V
DDQ
< 1.4V for t < 200 ms.
TAP AC ELECTRICAL CHARACTERISTICS
(1,2)
(OVER OPERATING RANGE)
Symbol Parameter
Min.
Max.
Unit
t
TCYC
TCK Clock cycle time
100
—
ns
f
TF
TCK Clock frequency
—
10
MHz
t
TH
TCK Clock HIGH
40
—
ns
t
TL
TCK Clock LOW
40
—
ns
t
TMSS
TMS setup to TCK Clock Rise
10
—
ns
t
TDIS
TDI setup to TCK Clock Rise
10
—
ns
t
CS
Capture setup to TCK Rise
10
—
ns
t
TMSH
TMS hold after TCK Clock Rise
10
—
ns
t
TDIH
TDI Hold after Clock Rise
10
—
ns
t
CH
Capture hold after Clock Rise
10
—
ns
t
TDOV
TCK LOW to TDO valid
—
20
ns
t
TDOX
TCK LOW to TDO invalid
0
—
ns
Notes:
1. Both t
CS
and t
CH
refer to the set-up and hold time requirements of latching data from the boundary scan register.
2. Test conditions are specified using the load in TAP AC test conditions. t
R
/t
F
= 1 ns.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LF51218A-6.5B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5TQ | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5TQI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LF51218A-7.5B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5B2I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5B3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5B3I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-7.5TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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