參數(shù)資料
型號： IS61LF51236A-6.5B2I
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述： 512K X 36 CACHE SRAM, 6.5 ns, PBGA119
封裝： 14 X 22 MM, PLASTIC, BGA-119
文件頁數(shù)： 33/35頁
文件大?。?/td> 281K
代理商： IS61LF51236A-6.5B2I
PACKAGING INFORMATION
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
02/12/03
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Plastic Ball Grid Array
Package Code: B (119-pin)
Notes:
1. Controlling dimension: millimeters, unless otherwise specified.
2. BSC = Basic ead spacing between centers.
3. Dimensions D1 and E do not nclude mold flash protrusion and
should be measured from the bottom of the package.
4. Formed eads shall be planar with respect to one another within
0.004 nches at the seating plane.
MILLIMETERS
INCHES
Sym.
Min.
Max.
Min.
Max.
N0.
Leads
119
A
A1
A2
A3
A4
b
D
D1
D2
E
E1
E2
—
0.50
0.80
1.30
2.41
0.70
1.00
1.70
—
0.095
0.028
0.039
0.067
0.020
0.032
0.051
0.56 BSC
0.60
21.80
20.32 BSC
19.40
13.80
7.62 BSC
11.90
0.022 BSC
0.024
0.858
0.800 BSC
0.764
0.543
0.300 BSC
0.469
0.90
22.20
0.035
0.874
19.60
14.20
0.772
0.559
12.10
0.476
e
1.27 BSC
0.050 BSC
E1
A1
D1
7
6
5
4
3
2
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
E2
E
A2
SEATING PLANE
e
D2
D
A
30
A3
A4
φ
b (119X)
相關(guān)PDF資料
PDF描述
IS61LF51236A-6.5B3 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B3I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5TQ 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5TQI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-7.5B2 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LF51236A-7.5B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-7.5B2I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-7.5B3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,Flow-Through,Sync,512K x 36,7.5ns,3.3v or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LF51236A-7.5B3I 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,Flow-Through,Sync,512K x 36,7.5ns,3.3v or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LF51236A-7.5B3I-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,Flow-Through,Sync,512K x 36,7.5ns,3.3v or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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