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參數(shù)資料
| 型號： | IS61LP6436A-166TQLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM |
| 中文描述： | 64K X 36 CACHE SRAM, 3.5 ns, PQFP100 |
| 封裝： | LEAD FREE, TQFP-100 |
| 文件頁數(shù)： | 6/17頁 |
| 文件大?。?/td> | 119K |
| 代理商： | IS61LP6436A-166TQLI |
IS61LP6432A
IS61LP6436A
ISSI
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
09/02/05
INTERLEAVED BURST ADDRESS TABLE (MODE = V
DD
or No Connect)
External Address
A1 A0
00
01
10
11
1st Burst Address
A1 A0
01
00
11
10
2nd Burst Address
A1 A0
10
11
00
01
3rd Burst Address
A1 A0
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = Vss)
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
T
STG
P
D
I
OUT
V
IN
, V
OUT
Voltage Relative to Vss for I/O Pins
V
IN
Voltage Relative to Vss for
for Address and Control Inputs
V
DD
Voltage on V
DD
Supply Relative to Vss
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Value
–55 to +150
1.6
100
–0.5 to V
DDQ
+ 0.3
–0.5 to V
DD
+ 0.5
Unit
°C
W
mA
V
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
0,0
1,0
0,1
A1', A0' = 1,1
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| IS61LPD102418A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
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| IS61LPD102418A-200B3I | 功能描述:靜態(tài)隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPD102418A-200B3I-TR | 功能描述:靜態(tài)隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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