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| 型號： | IS61LPD51218A-200B2I |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 512K X 18 CACHE SRAM, 3.1 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1MM PITCH, PLASTIC, BGA-119 |
| 文件頁數(shù)： | 12/32頁 |
| 文件大?。?/td> | 216K |
| 代理商： | IS61LPD51218A-200B2I |
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12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/09/05
IS61VPD25636A, IS61VPD51218A, IS61LPD25636A, IS61LPD51218A
ISSI
OPERATING RANGE (IS61LPDXXXXX)
Range
Commercial
Ambient Temperature
0°C to +70°C
V
DD
V
DDQ
3.3V + 5%
3.3 / 2.5V + 5%
Industrial
–40°C to +85°C
3.3V + 5%
3.3 / 2.5V + 5%
OPERATING RANGE (IS61VPDXXXXX)
Range
Commercial
Ambient Temperature
0°C to +70°C
V
DD
V
DDQ
2.5V + 5%
2.5V + 5%
Industrial
–40°C to +85°C
2.5V + 5%
2.5V + 5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
3.3V
Min.
2.5V
Min.
Symbol
Parameter
Test Conditions
Max.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= –4.0 mA (3.3V)
I
OH
= –1.0 mA (2.5V)
2.4
—
2.0
—
V
V
OL
Output LOW Voltage
I
OL
= 8.0 mA (3.3V)
I
OL
= 1.0 mA (2.5V)
—
0.4
—
0.4
V
V
IH
Input HIGH Voltage
2.0
V
DD
+ 0.3
1.7
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
-0.3
0.8
-0.3
0.7
V
I
LI
Input Leakage Current
Output Leakage Current Vss
≤
V
OUT
≤
V
DDQ
,
Vss
≤
V
IN
≤
V
DD
(1)
-5
5
-5
5
μA
I
LO
-5
5
-5
5
μA
OE
= V
IH
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-250
MAX
-200
MAX
Symbol
Parameter
Test Conditions
Temp. range
x18
x36
x18
x36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
≤
V
IL
,
All Inputs
≤
0.2V or
≥
V
DD
– 0.2V,
Cycle Time
≥
t
KC
min.
Com.
I
ND
.
275
300
275
300
250
275
250
275
mA
I
SB
Standby Current
TTL Input
Device Deselected,
V
DD
= Max.,
All Inputs
≤
V
IL
or
≥
V
IH
,
ZZ
≤
V
IL
, f = Max.
Device Deselected,
V
DD
= Max.,
V
IN
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V
f = 0
C
OM
.
Ind.
150
150
150
150
150
150
150
150
mA
I
SBI
Standby Current
CMOS Input
Com.
Ind.
100
105
100
105
100
105
100
105
mA
I
SB
2
Sleep Mode
ZZ>V
IH
Com.
Ind.
50
60
50
60
50
60
50
60
mA
Note:
1. MODE pin has an internal pullup and should be tied to V
DD
or V
SS
. It exhibits ±100μA maximum leakage current when tied to
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LPD51218A-200B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200TQ | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200TQI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-250B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LPD51218A-200B3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200B3I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200TQI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-250B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
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