參數(shù)資料
型號: IS61LPD51218A
廠商: Integrated Silicon Solution, Inc.
英文描述: 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
中文描述: 256K × 36,為512k × 18 9 MB的同步流水線,雙循環(huán)取消選擇靜態(tài)RAM
文件頁數(shù): 7/32頁
文件大小: 216K
代理商: IS61LPD51218A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/09/05
7
IS61VPD25636A, IS61VPD51218A, IS61LPD25636A, IS61LPD51218A
ISSI
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is
desired.
165 PBGA PACKAGE PIN CONFIGURATION
512K
X
18 (TOP VIEW)
PIN DESCRIPTIONS
1
NC
NC
NC
NC
NC
NC
NC
NC
DQb
DQb
DQb
DQb
DQPb
NC
MODE
2
A
A
NC
DQb
DQb
DQb
DQb
Vss
NC
NC
NC
NC
NC
NC
NC
3
4
5
NC
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
TDI
TMS
6
7
8
9
10
A
A
NC
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
NC
A
A
11
A
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NC
NC
NC
NC
NC
A
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
BWb
NC
Vss
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
Vss
A
A
CE2
CLK
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
A
1
*
A
0
*
BWE
GW
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
TDO
TCK
ADSC
OE
Vss
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
Vss
A
A
ADV
ADSP
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
Symbol
A
A0, A1
ADV
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write
Controls
ADSP
ADSC
GW
CLK
CE
,
CE2
,
CE2
BW
x (x=a,b)
Symbol
BWE
Pin Name
Byte Write Enable
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQx
DQPx
V
DD
V
DDQ
Output Enable
Power Sleep Mode
Burst Sequence Selection
JTAG Pins
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
Isolated Output Power Supply
3.3V/2.5V
Vss
Ground
相關(guān)PDF資料
PDF描述
IS61LPD51218A-200B2 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51218A-200B2I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51218A-200B3 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51218A-200B3I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51218A-200TQ 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LPD51218A-200B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51218A-200B2I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51218A-200B3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51218A-200B3I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51218A-200TQ 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM