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參數(shù)資料
| 型號： | IS61LPS51218A-200TQI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 512K X 18 CACHE SRAM, 3.1 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 22/32頁 |
| 文件大?。?/td> | 217K |
| 代理商： | IS61LPS51218A-200TQI |
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22
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/29/05
IS61VPS25636A, IS61LPS25636A, IS61VPS51218A, IS61LPS51218A
ISSI
INSTRUCTION CODES
Code
Instruction
Description
000
EXTEST
Captures the Input/Output ring contents. Places the boundary scan register between
the TDI and TDO. Forces all SRAM outputs to High-Z state. This
instruction is not 1149.1 compliant.
001
IDCODE
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operation.
010
SAMPLE-Z
Captures the Input/Output contents. Places the boundary scan register between TDI
and TDO. Forces all SRAM output drivers to a High-Z state.
011
RESERVED
Do Not Use: This instruction is reserved for future use.
100
SAMPLE/PRELOAD
Captures the Input/Output ring contents. Places the boundary scan register between
TDI and TDO. Does not affect the SRAM operation. This instruction does not
implement 1149.1 preload function and is therefore not 1149.1 compliant.
101
RESERVED
Do Not Use: This instruction is reserved for future use.
110
RESERVED
Do Not Use: This instruction is reserved for future use.
111
BYPASS
Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
Select DR
Capture DR
0
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
Select IR
Capture IR
0
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
Test Logic Reset
1
Run Test/Idle
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
TAP CONTROLLER STATE DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LPS51218A-200TQLI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-250B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-250B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-250B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-250B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LPS51218A-200TQI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 512Kx18 200Mhz Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51218A-200TQLI | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 512Kx18 200Mhz Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51218A-200TQLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 512Kx18 200Mhz Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51218A-250B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-250B2I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
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