參數(shù)資料
型號: IS61LPS51218A-200TQLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述: 512K X 18 CACHE SRAM, 3.1 ns, PQFP100
封裝: LEAD FREE, TQFP-100
文件頁數(shù): 6/32頁
文件大?。?/td> 217K
代理商: IS61LPS51218A-200TQLI
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/29/05
IS61VPS25636A, IS61LPS25636A, IS61VPS51218A, IS61LPS51218A
ISSI
PIN DESCRIPTIONS
165 PBGA PACKAGE PIN CONFIGURATION
256K
X
36 (TOP VIEW)
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
DQPc
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
DQPd
NC
MODE
A
A
NC
DQc
DQc
DQc
DQc
Vss
DQd
DQd
DQd
DQd
NC
NC
NC
CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
BWc
BWb
CE2
CLK
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
A
1
*
A
0
*
BWE
ADSC
ADV
A
A
NC
DQPb
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC DQPa
A
A
NC
NC
BWd
Vss
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
Vss
A
A
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
TDI
TMS
GW
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
TDO
TCK
OE
Vss
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
Vss
A
A
ADSP
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
A
A
Symbol
A
A0, A1
ADV
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write
Controls
ADSP
ADSC
GW
CLK
CE
,
CE2
,
CE2
BW
x (x=a,b,c,d)
Symbol
BWE
Pin Name
Byte Write Enable
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQx
DQPx
V
DD
V
DDQ
Output Enable
Power Sleep Mode
Burst Sequence Selection
JTAG Pins
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
Isolated Output Power Supply
3.3V
/2.5V
Vss
Ground
相關(guān)PDF資料
PDF描述
IS61LPS51218A-250B2 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250B2I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250B3 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250B3I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250TQ 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LPS51218A-200TQLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 512Kx18 200Mhz Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS51218A-250B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250B2I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250B3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250B3I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM