參數(shù)資料
型號(hào)： IS61LPS51218A-250B3
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述： 512K X 18 CACHE SRAM, 2.6 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
文件頁(yè)數(shù)： 12/32頁(yè)
文件大?。?/td> 217K
代理商： IS61LPS51218A-250B3
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/29/05
IS61VPS25636A, IS61LPS25636A, IS61VPS51218A, IS61LPS51218A
ISSI
OPERATING RANGE (IS61LPSXXXXX)
Range
Commercial
Ambient Temperature
0°C to +70°C
V
DD
V
DDQ
3.3V + 5%
3.3V / 2.5V + 5%
Industrial
–40°C to +85°C
3.3V + 5%
3.3V / 2.5V + 5%
OPERATING RANGE (IS61VPSXXXXX)
Range
Commercial
Ambient Temperature
0°C to +70°C
V
DD
V
DDQ
2.5V + 5%
2.5V + 5%
Industrial
–40°C to +85°C
2.5V + 5%
2.5V + 5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
3.3V
Min.
2.5V
Min.
Symbol
Parameter
Test Conditions
Max.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= –4.0 mA (3.3V)
I
OH
= –1.0 mA (2.5V)
2.4
—
2.0
—
V
V
OL
Output LOW Voltage
I
OL
= 8.0 mA (3.3V)
I
OL
= 1.0 mA (2.5V)
—
0.4
—
0.4
V
V
IH
Input HIGH Voltage
2.0
V
DD
+ 0.3
1.7
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
-0.3
0.8
-0.3
0.7
V
I
LI
Input Leakage Current
Output Leakage Current Vss
≤
V
OUT
≤
V
DDQ
,
Vss
≤
V
IN
≤
V
DD
(1)
-5
5
-5
5
μA
I
LO
-5
5
-5
5
μA
OE
= V
IH
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-250
MAX
-200
MAX
Symbol
Parameter
Test Conditions
Temp. range
x18
x36
x18
x36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
≤
V
IL
,
All Inputs
≤
0.2V or
≥
V
DD
– 0.2V,
Cycle Time
≥
t
KC
min.
Com.
Ind.
275
300
275
300
250
275
250
275
mA
I
SB
Standby Current
TTL Input
Device Deselected,
V
DD
= Max.,
All Inputs
≤
V
IL
or
≥
V
IH
,
ZZ
≤
V
IL
, f = Max.
Com.
Ind.
150
150
150
150
150
150
150
150
mA
I
SBI
Standby Current
CMOS Input
Device Deselected,
V
DD
= Max.,
V
IN
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V
f = 0
Com.
Ind.
100
105
100
105
100
105
100
105
mA
I
SB
2
Sleep Mode
ZZ>V
IH
Com.
Ind.
50
60
50
60
50
60
50
60
mA
Note:
1. MODE pin has an internal pullup and should be tied to V
DD
or V
SS
. It exhibits ±100μA maximum leakage current when tied to
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V.
相關(guān)PDF資料
PDF描述
IS61LPS51218A-250B3I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250TQ 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250TQI 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51236A-250B2 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51236A-250B2I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LPS51218A-250B3I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250TQ 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-250TQI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218B-200TQLI 功能描述:IC SRAM 9MBIT 200MHZ 100LQFP 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):在售 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M（512K x 18） 速度:200MHz 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-LQFP（14x20） 標(biāo)準(zhǔn)包裝:72
IS61LPS51236A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
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