參數(shù)資料
型號(hào)： IS61LPS51236A-250B3
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述： 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
文件頁數(shù)： 24/34頁
文件大?。?/td> 229K
代理商： IS61LPS51236A-250B3
24
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
02/11/05
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
ISSI
INSTRUCTION CODES
Code
Instruction
Description
000
EXTEST
Captures the Input/Output ring contents. Places the boundary scan register between
the TDI and TDO. Forces all SRAM outputs to High-Z state. This
instruction is not 1149.1 compliant.
001
IDCODE
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operation.
010
SAMPLE-Z
Captures the Input/Output contents. Places the boundary scan register between TDI
and TDO. Forces all SRAM output drivers to a High-Z state.
011
RESERVED
Do Not Use: This instruction is reserved for future use.
100
SAMPLE/PRELOAD
Captures the Input/Output ring contents. Places the boundary scan register between
TDI and TDO. Does not affect the SRAM operation. This instruction does not
implement 1149.1 preload function and is therefore not 1149.1 compliant.
101
RESERVED
Do Not Use: This instruction is reserved for future use.
110
RESERVED
Do Not Use: This instruction is reserved for future use.
111
BYPASS
Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
Select DR
Capture DR
0
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
Select IR
Capture IR
0
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
Test Logic Reset
1
Run Test/Idle
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
TAP CONTROLLER STATE DIAGRAM
相關(guān)PDF資料
PDF描述
IS61LPS51236A-250B3I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51236A-250TQ 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51236A-250TQI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LV 216L 32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低壓高速CMOS靜態(tài)RAM)
IS61LV3216L-15KI 32K x 16 LOW VOLTAGE CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LPS51236A-250B3I 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,Pipeline,Sync,512K x 36,250MHz,3.3v or 2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS51236A-250B3I-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,Pipeline,Sync,512K x 36,250MHz,3.3v or 2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS51236A-250B3LI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb 512Kx36 250MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS51236A-250B3LI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb 512Kx36 250MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS51236A-250B3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb 512Kx36 250MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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