- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377562 > IS61LV10248-10T (INTEGRATED SILICON SOLUTION INC) 1M x 8 HIGH-SPEED CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS61LV10248-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 1M X 8 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 123K |
| 代理商： | IS61LV10248-10T |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
3
IS61LV10248
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
V
DD
Relates to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.5 to V
DD
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
TRUTH TABLE
Mode
WE
CE
OE
I/O Operation
V
DD
Current
Not Selected
(Power-down)
Output Disabled H
Read
Write
X
H
X
High-Z
I
SB
1
, I
SB
2
L
L
L
H
L
X
High-Z
D
OUT
D
IN
I
CC
I
CC
I
CC
H
L
OPERATING RANGE
Range
Ambient Temperature
V
DD
Commercial
0°C to +70°C
3.3V +10%, -5%
Industrial
–40°C to +85°C
3.3V +10%, -5%
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV10248-10TI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10TLI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8B | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8BI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8M | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV10248-10TI | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV10248-10TI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV10248-10TLI | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV10248-10TLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV10248-10T-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。