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參數(shù)資料
| 型號(hào)： | IS61LV10248-8B |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 1M X 8 STANDARD SRAM, 8 ns, PBGA36 |
| 封裝： | 9 X 11 MM, MINI, BGA-36 |
| 文件頁(yè)數(shù)： | 6/16頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | IS61LV10248-8B |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
IS61LV10248
ISSI
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8
-10
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2
t
LZCE
(2)
t
PU
t
PD
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to High-Z Output
OE
to Low-Z Output
CE
to High-Z Output
CE
to Low-Z Output
Power Up Time
Min.
8
—
3
—
—
—
0
—
3
0
Max.
—
8
—
8
3.5
3
—
3
—
—
Min.
10
—
3
—
—
—
0
0
3
0
Max.
—
10
—
10
4
4
—
4
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Power Down Time
—
8
—
10
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV10248-8BI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8M | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8MI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8T | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8TI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV10248-8BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8M | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8MI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV10248-8T | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV10248-8TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
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