參數(shù)資料
型號: IS61LV12816L-10TI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 128K X 16 STANDARD SRAM, 10 ns, PDSO44
封裝: PLASTIC, TSOP2-44
文件頁數(shù): 6/16頁
文件大?。?/td> 112K
代理商: IS61LV12816L-10TI
IS61LV12816L
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
ISSI
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
Figure 1.
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
Figure 2.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
-10 ns
Min.
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2)
t
LZCE
(2)
t
BA
t
HZB
(2)
t
LZB
(2)
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Parameter
Min.
Max
Max.
Unit
Read Cycle Time
8
10
ns
Address Access Time
8
10
ns
Output Hold Time
3
3
ns
CE
Access Time
8
10
ns
OE
Access Time
3.5
4
ns
OE
to High-Z Output
3.5
4
ns
OE
to Low-Z Output
0
0
ns
CE
to High-Z Output
0
3.5
0
4
ns
CE
to Low-Z Output
3.5
3
ns
LB
,
UB
Access Time
3.5
4
ns
LB
,
UB
to High-Z Output
0
3.5
0
4
ns
LB
,
UB
to Low-Z Output
0
0
ns
Z
O
= 50
1.5V
50
OUTPUT
30 pF
Including
jig and
scope
相關(guān)PDF資料
PDF描述
IS61LV12816L-10TL 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-10TLI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8BI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8T 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8TI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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