參數(shù)資料
型號: IS61LV12816L-10TL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 128K X 16 STANDARD SRAM, 10 ns, PDSO44
封裝: LEAD FREE, PLASTIC, TSOP2-44
文件頁數(shù): 11/16頁
文件大?。?/td> 112K
代理商: IS61LV12816L-10TL
IS61LV12816L
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
11
ISSI
DATA UNDEFINED
t
WC
ADDRESS 1
ADDRESS 2
t
WC
HIGH-Z
t
PBW
WORD 1
LOW
WORD 2
UB_CEWR4.eps
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB
,
LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
t
PBW
DATA
IN
VALID
t
SD
t
HD
t
SA
t
HA
t
HA
WRITE CYCLE NO. 4
(
LB
,
UB
Controlled, Back-to-Back Write)
(1,3)
Notes:
1. The internal Write time is defined by the overlap of
CE
= LOW,
UB
and/or
LB
= LOW, and
WE
= LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The
t
SA
,
t
HA
,
t
SD
, and
t
HD
timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before
WE
= LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the
LB
,
UB
pins can be used to control the Write function.
相關(guān)PDF資料
PDF描述
IS61LV12816L-10TLI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8BI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8T 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8TI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8TL 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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