參數(shù)資料
型號(hào): IS61LV12824-10TQLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 128K X 24 STANDARD SRAM, 10 ns, PQFP100
封裝: LEAD FREE, TQFP-100
文件頁(yè)數(shù): 10/13頁(yè)
文件大?。?/td> 77K
代理商: IS61LV12824-10TQLI
IS61LV12824
ISSI
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
WRITE CYCLE NO. 3
(1)
(
WE
Controlled:
OE
I
S
LOW
DURING
W
RITE
C
YLE
)
Note:
1. The internal Write time is defined by the overlap of
CE1
and
CE2
= LOW, CE2 = HIGH and
WE
= LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The Data Input Setup and Hold timing is
referenced to the rising or falling edge of the signal that terminates the Write.
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE1
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
HIGH
CE2
CE2_WR3.eps
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV12824-10TQLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3Mb 128Kx24 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12824-10TQ-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3Mb 128Kx24 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12824-12B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM
IS61LV12824-12BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM
IS61LV12824-12TQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM