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參數(shù)資料
| 型號： | IS61LV256-12J |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 12 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 100K |
| 代理商： | IS61LV256-12J |
ISSI
IS61LV256
Integrated Silicon Solution, Inc.
Rev. F 0296
SR81995LV61
2-3
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –2.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 4.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
μ
A
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
Ind.
–2
–5
2
5
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Com.
Ind.
–2
–5
2
5
μ
A
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns
Min. Max.
-15 ns
Min. Max.
-20 ns
Min. Max.
-25 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
I
CC
1
Vcc Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
Com.
Ind.
—
—
50
—
—
—
50
60
—
—
50
60
—
—
50
60
mA
I
CC
2
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
—
100
—
—
—
90
100
—
—
80
90
—
—
70
80
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
CC
= Max.,
CE
≤
V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
10
—
—
—
10
20
—
—
10
20
—
—
10
20
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
—
—
2
—
—
—
2
5
—
—
2
5
—
—
2
5
mA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
3.3V +10%, –5%
3.3V
±
5%
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| IS61LV256-12N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-12T | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-15J | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-15N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV256-12JI | 功能描述:靜態(tài)隨機存取存儲器 256K 32Kx8 12ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256-12JI-TR | 功能描述:靜態(tài)隨機存取存儲器 256K 32Kx8 12ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256-12JL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV256-12J-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 12ns 28-Pin SOJ T/R |
| IS61LV256-12N | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
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