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參數(shù)資料
| 型號(hào)： | IS61LV256-25N |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 25 ns, PDIP28 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-28 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | IS61LV256-25N |
ISSI
IS61LV256
IS61LV256
32K x 8 LOW VOLTAGE CMOS STATIC RAM
Integrated Silicon Solution, Inc.
Rev. F 0296
SR81995LV61
2-1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1996, Integrated Silicon Solution, Inc.
FEATURES
High-speed access time: 12, 15, 20, 25 ns
Automatic power-down when chip is deselected
CMOS low power operation
— 345 mW (max.) operating
— 7 mW (max.) CMOS standby
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three-state outputs
DESCRIPTION
The
ISSI
IS61LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 12 ns maximum.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
50
μ
W (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (
CE
). The active LOW Write Enable (
WE
) controls
both writing and reading of the memory.
The IS61LV256 is available in the JEDEC standard 28-pin,
300-mil DIP and SOJ, plus the 450-mil TSOP package.
FEBRUARY 1996
ISSI
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
256 X 1024
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV256-25T | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV25616L | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-10LQI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-10T | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-12KI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV256-25NI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IS61LV256-25T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-25TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IS61LV2568 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568_03 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
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