- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377563 > IS61LV256-25T (INTEGRATED SILICON SOLUTION INC) 32K x 8 LOW VOLTAGE CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS61LV256-25T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 25 ns, PDSO28 |
| 封裝： | 0.450 INCH, PLASTIC, TSOP-28 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 100K |
| 代理商： | IS61LV256-25T |
ISSI
IS61LV256
2-2
Integrated Silicon Solution, Inc.
Rev. F 0296
SR81995LV61
PIN CONFIGURATION
28-Pin DIP and SOJ
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
28-Pin TSOP
PIN DESCRIPTIONS
A0-A14
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
Vcc
Power
GND
Ground
TRUTH TABLE
Mode
WE
CE
OE
I/O Operation
Vcc Current
Not Selected
(Power-down)
Output Disabled
Read
Write
X
H
X
High-Z
I
SB
1
, I
SB
2
H
H
L
L
L
L
H
L
X
High-Z
D
OUT
D
IN
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +4.6
–55 to +125
–65 to +150
0.5
20
Unit
V
°
C
°
C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV25616L | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-10LQI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-10T | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-12KI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-12TI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV256-25TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IS61LV2568 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568_03 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568-10K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568-10KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:x8 SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。