參數(shù)資料
型號(hào)： IS61LV2568-12T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述： 256K X 8 STANDARD SRAM, 12 ns, PDSO44
封裝： TSOP2-44
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 88K
代理商： IS61LV2568-12T
IS61LV2568
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
3
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
(1)
2.0
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND - V
IN
- V
CC
Com.
Ind.
–1
–5
1
5
μA
I
LO
Output Leakage
GND - V
OUT
- V
CC
, Outputs Disabled
Com.
Ind.
–1
–5
1
5
μA
Note:
1. V
IL
(min) = –0.3V (DC); V
IL
(min) = –2.0V (pulse width - 2.0 ns).
V
IH
(max) = V
CC
+ 0.3V (DC); V
IH
(max) = Vcc + 2.0V (pulse width - 2.0 ns).
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
Min. Max.
-10 ns
Min. Max.
-12 ns
Min. Max.
-15 ns
Min. Max.
Symbol
Parameter
Test Conditions
Unit
I
CC
Vcc Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
Com.
Ind.
—
—
150
160
—
—
125
135
—
—
110
120
—
—
90
100
mA
I
SB
1
TTL Standby
Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = max
Com.
Ind.
—
—
50
60
—
—
40
50
—
—
35
45
—
—
30
40
mA
I
SB
2
CMOS Standby
Current
(CMOS Inputs)
V
CC
= Max.,
CE
- V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V, or
V
IN
- 0.2V, f = 0
Com.
Ind.
—
—
10
20
—
—
10
20
—
—
10
20
—
—
10
20
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
3.3V ± 10%
3.3V ± 10%
相關(guān)PDF資料
PDF描述
IS61LV2568-15K 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-15T 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-8K 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-8T 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-10KI x8 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV2568-12TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:x8 SRAM
IS61LV2568-15K 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-15KI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:x8 SRAM
IS61LV2568-15T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-15TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:x8 SRAM
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