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參數(shù)資料
| 型號(hào)： | IS61LV2568L-10KLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 256K X 8 STANDARD SRAM, 10 ns, PDSO36 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-36 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | IS61LV2568L-10KLI |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
07/25/05
1
IS61LV2568L
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
JULY 2005
FEATURES
High-speed access time: 8, 10 ns
Operating Current: 50mA (typ.)
Standby Current: 700μA (typ.)
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
– 36-pin 400-mil SOJ
– 44-pin TSOP (Type II)
Lead-free available
DESCRIPTION
The
ISSI
IS61LV2568L is a very high-speed, low power,
262,144-word by 8-bit CMOS static RAM. The IS61LV2568L
is fabricated using
ISSI
's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 36mW (max.) with CMOS input levels.
The IS61LV2568L operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV2568L is available in 36-pin 400-mil SOJ and
44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
256K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
256K x 8 HIGH-SPEED CMOS STATIC RAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV2568L-10T | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-10TL | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-8K | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-8T | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568 | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV2568L-10KLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10T | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10TL | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10TL-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10T-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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