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參數(shù)資料
| 型號(hào)： | IS61LV3216L-10K |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-44 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | IS61LV3216L-10K |
IS61LV3216L
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ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
7
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV3216L-10T | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12K | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV10248 | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10BI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10BLI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV3216L-10T | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12K | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12KI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 12ns 44-Pin TSOP-II |
| IS61LV3216L-12TI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
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