- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377562 > IS61LV3216L-10T (INTEGRATED SILICON SOLUTION INC) 32K x 16 LOW VOLTAGE CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS61LV3216L-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IS61LV3216L-10T |
IS61LV3216L
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
5
DATA VALID
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z
DATA VALID
t
HZB
ADDRESS
OE
CE
LB, UB
D
OUT
t
HZCE
t
BA
t
LZB
READ CYCLE NO. 2
(1,3)
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (
CE
=
OE
= V
IL
,
UB
or
LB
= V
IL
)
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE
,
UB
, or
LB
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transition.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV3216L-12K | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV10248 | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10BI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10BLI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10MI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV3216L-12K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 12ns 44-Pin TSOP-II |
| IS61LV3216L-12TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-15K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。