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參數(shù)資料
| 型號： | IS61LV3216L-12KI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-44 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IS61LV3216L-12KI |
IS61LV3216L
ISSI
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-10
-12
-15
-20
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
t
WC
Write Cycle Time
10
—
12
—
15
—
20
—
ns
t
SCE
CE
to Write End
8
—
9
—
10
—
12
—
ns
t
AW
Address Setup Time
to Write End
9
—
10
—
10
—
12
—
ns
t
HA
Address Hold from Write End
1
—
1
—
1
—
1
—
ns
t
SA
Address Setup Time
0
—
0
—
0
—
0
—
ns
t
PWB
LB
,
UB
Valid to End of Write
9
—
10
—
11
—
12
—
ns
t
PWE
WE
Pulse Width
7
—
8
—
10
—
11
—
ns
t
SD
Data Setup to Write End
5
—
6
—
7
—
—
8
ns
t
HD
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
t
HZWE
(2)
WE
LOW to High-Z Output
—
5
—
6
—
7
—
8
ns
t
LZWE
(2)
WE
HIGH to Low-Z Output
1
—
1
—
1
—
1
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100%
tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be
in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and
Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV3216L-12T | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12TI | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-15K | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-15T | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-15TI | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV3216L-12T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 12ns 44-Pin TSOP-II |
| IS61LV3216L-12TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-15K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-15KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L15T | 制造商:ISSI 功能描述:* |
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