參數(shù)資料
型號(hào): IS61LV3216L-20KI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類(lèi): DRAM
英文描述: 32K x 16 LOW VOLTAGE CMOS STATIC RAM
中文描述: 32K X 16 STANDARD SRAM, 20 ns, PDSO44
封裝: 0.400 INCH, PLASTIC, SOJ-44
文件頁(yè)數(shù): 7/8頁(yè)
文件大小: 102K
代理商: IS61LV3216L-20KI
IS61LV3216L
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ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
7
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV3216L-20T 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-20TI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV51216 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV51216-10M 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV51216-10MI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray