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參數(shù)資料
| 型號： | IS61LV5128AL-10BLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 10 ns, PBGA36 |
| 封裝： | 8 X 10 MM, LEAD FREE, MINI, BGA-36 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 73K |
| 代理商： | IS61LV5128AL-10BLI |
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. B
07/16/01
3
IS61LV5128
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
V
°
C
°
C
W
–
0.5 to Vcc + 0.5
–
55 to +125
–
65 to +150
1.0
OPERATING RANGE
10 ns
V
CC
12 ns, 15 ns
V
CC
Range
Ambient Temperature
Commercial
0
°
C to +70
°
C
3.3V +10%, -5%
3.3V ± 10%
Industrial
–
40
°
C to +85
°
C
3.3V +10%, -5%
3.3V ± 10%
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.3V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV5128AL-10K | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV5128AL-10KI | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV5128AL-10KLI | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV5128AL-10T | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV5128AL-10TI | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV5128AL-10BLI-TR | 功能描述:靜態(tài)隨機存取存儲器 4Mb 512Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV5128AL-10K | 功能描述:靜態(tài)隨機存取存儲器 4Mb 512Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV5128AL-10KI | 功能描述:靜態(tài)隨機存取存儲器 4Mb 512Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV5128AL-10KI-TR | 功能描述:靜態(tài)隨機存取存儲器 4Mb 512Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV5128AL-10KLI | 功能描述:靜態(tài)隨機存取存儲器 4Mb 512Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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