參數(shù)資料
型號: IS61LV5128AL-10KI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 512K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 512K X 8 STANDARD SRAM, 10 ns, PDSO36
封裝: 0.400 INCH, PLASTIC, MS-027, SOJ-36
文件頁數(shù): 8/9頁
文件大?。?/td> 73K
代理商: IS61LV5128AL-10KI
8
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. B
07/16/01
IS61LV5128
ISSI
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
V
IH
.
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR2.eps
WRITE CYCLE NO. 2
(1,2)
(
WE
Controlled:
OE
is HIGH During Write Cycle)
WRITE CYCLE NO. 3
(
WE
Controlled:
OE
is LOW During Write Cycle)
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR3.eps
相關(guān)PDF資料
PDF描述
IS61LV5128AL-10KLI 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10T 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10TI 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10TLI 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-12K 512K x 8 HIGH-SPEED CMOS STATIC RAM
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