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參數(shù)資料
| 型號(hào)： | IS61LV5128AL-10KLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 10 ns, PDSO36 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-36 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | IS61LV5128AL-10KLI |
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. B
07/16/01
5
IS61LV5128
ISSI
AC TEST LOADS
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10 ns
Min.
-12 ns
Min.
-15 ns
Min.
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
(2)
t
HZCE
(2)
t
PU
t
PD
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Parameter
Max.
Max.
Max.
Unit
Read Cycle Time
10
—
12
—
15
—
ns
Address Access Time
—
10
—
12
—
15
ns
Output Hold Time
3
—
3
—
3
—
ns
CE
Access Time
—
10
—
12
—
15
ns
OE
Access Time
—
4
—
5
—
7
ns
OE
to Low-Z Output
0
—
0
—
0
—
ns
OE
to High-Z Output
0
4
0
5
0
6
ns
CE
to Low-Z Output
3
—
3
—
3
—
ns
CE
to High-Z Output
Power Up Time
Power Down Time
0
0
—
4
—
10
0
0
—
6
—
12
0
0
—
8
—
15
ns
ns
ns
Figure 1
Figure 2
319
30 pF
Including
jig and
scope
353
OUTPUT
3.3V
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV5128AL-10T | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV5128AL-10TI | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV5128AL-10TLI | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV5128AL-12K | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV5128AL-12T | 512K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV5128AL-10KLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV5128AL-10KLI-TR/U858A | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV5128AL-10K-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV5128AL-10T | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV5128AL-10TI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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