參數(shù)資料
型號(hào): IS61LV5128AL-10TI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 512K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 512K X 8 STANDARD SRAM, 10 ns, PDSO44
封裝: PLASTIC, TSOP2-44
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 73K
代理商: IS61LV5128AL-10TI
4
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. B
07/16/01
IS61LV5128
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 ns
Min.
-12 ns
Min.
-15 ns
Symbol
Parameter
Test Conditions
Max.
Max.
Min.
Max.
Unit
I
CC
Vcc Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
.
Com.
Ind.
145
155
135
145
125
135
mA
I
SB
TTL Standby
Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = f
MAX
.
Com.
Ind.
70
80
60
70
50
60
mA
I
SB
1
TTL Standby
Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
Com.
Ind.
20
25
20
25
20
25
mA
I
SB
2
CMOS Standby
Current
(CMOS Inputs)
V
CC
= Max.,
CE
V
CC
0.2V,
V
IN
V
CC
0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
10
15
10
15
10
15
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
=
4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
Com.
Ind.
1
5
1
5
μA
I
LO
Output Leakage
GND
V
OUT
V
CC
, Outputs Disabled
Com.
Ind.
1
5
1
5
μA
Note:
1. V
IL
=
3.0V for pulse width less than 10 ns.
相關(guān)PDF資料
PDF描述
IS61LV5128AL-10TLI 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-12K 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-12T 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-12TI 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128 512K x 8 High-Speed CMOS Static RAM(512K x 8 高速CMOS靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV5128AL-10TI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV5128AL-10TLI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV5128AL-10TLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV5128AL-10T-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV5128AL-12K 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 HIGH-SPEED CMOS STATIC RAM