參數(shù)資料
型號: IS61S6432
英文描述: 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
中文描述: 64K的× 32 SYNCHRONOU擰管道靜態(tài)RAM
文件頁數(shù): 5/20頁
文件大?。?/td> 523K
代理商: IS61S6432
IS61S6432
Integrated Circuit Solution Inc.
5
SSE003-0B
INTERLEAVED BURST ADDRESS TABLE
(MODE = V
CCQ
or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
ABSOLUTE MAXIMUM RATINGS
(1,2,3)
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under Bias
–10 to +85
°C
T
STG
Storage Temperature
–55 to +150
°C
P
D
Power Dissipation
1.8
W
I
OUT
Output Current (per I/O)
100
mA
V
IN
, V
OUT
Voltage Relative to GND for I/O Pins
–0.5 to V
CCQ
+ 0.3
V
V
IN
Voltage Relative to GND for for Address and Control Inputs
–0.5 to 5.5
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
LINEAR BURST ADDRESS TABLE
(MODE = GND
Q
)
0,0
1,0
0,1
A1
, A0
= 1,1
OPERATING RANGE
Range
Ambient Temperature
V
CC
Commercial
0°C to +70°C
3.3V +10%, –5%
Industrial
–40°C to +85°C
3.3V +10%, –5%
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